Profile: Advanced Semiconductor, Inc. manufactures RF power transistors and microwave diodes. We offer bipolar RF power transistors, enhancement mode FET RF power transistors, and LDMOS FET RF power transistors covering the 1.0 MHz to 4.2 GHz frequency spectrum with output power up to 600 watts. RF power transistors are available in a variety of hermetic and non-hermetic packages including balanced configurations. Many of our designs for RF power transistors feature internal impedance matching networks for enhanced performance. Our pulsed transistors are characterized for a variety of pulse widths in specific UHF frequency bands. All devices have internal impedance matching and are housed in hermetic packages. Schottky barrier mixer and detector diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz for use in waveguide, coaxial and stripline circuits.