Profile: Mattson Technology, Inc. specializes in RTP, dry strip, and etch applications in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processes. Helios™ XP features a model-based temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The system's spike anneal performance, with rapid ramp and cool-down rates provides the precise process control required for ultra-shallow junction formation. Its low temperature control capability enables processing at steady state temperatures down to 200°C and provides temperature uniformity across the wafer, outperforming sub-45nm NiSi formation requirements. The third key enabling attribute of the Helios™ XP is its unique capability for pattern independent rapid thermal processing. Nexion™ is an inductively coupled plasma (ICP) source with wafer bias capability that enables independent control of ion energy and ion density at low processing pressures. These features provide unique capability for controlling device profiles for very fine geometries.