Profile: Polyfet R F Devices specializes in offering high power RF mosfet transistors. The LDMOS is a new series of transistors. Its LDMOS technology offer high gain , efficiency and linearity for operations at frequencies of up to 1500 Mhz. Typical gain at 1000 MHz is 13 dB and 16 dB at 500 Mhz. RF power of up to 100W at 1 GHz with gain of 11 dB can be expected. LDMOS transistors have the added advantage of not having BEO ( Beryllium Oxide) in its construction, thereby eliminating a need for this toxic material. The 50V series VDMOS are designed to have a minimum Bvdss of 125V. There are two part types for this series. The S3 series are large die devices and we have the SM341(150W) and SR341(300W) transistors equivlent to the MRF151 and MRF151G. The frequency range extends up to 500 Mhz for these devices.