The reaction chamber is where the thermal decomposition reaction and deposition occurs. Because the reaction chamber of an MOCVD system contains the longest time constant for reactant flushing, the abruptness of interfaces is largely controlled. Reaction chamber walls are generally made of either fused silica or stainless steel. It is used for producing semiconductor layers, superconductors, or other layers on any desired substrate, such as silicon or SiC. In many applications, inductive heaters or resistant heaters are used for heating the substrates and/or other elements of the reaction chamber. For feeding the induction coils or other electrical elements disposed in the reaction chamber for heaters, sensors or control devices, it is necessary to provide electrical feethroughs and especially HF or RF (radio frequency) feethroughs.