Silicon wafer-related GOI sensitivity has driven silicon wafer suppliers to develop wafers with lower and with zero vacancy-related defects. Evaluation of surface defects in silicon wafers is a critical step in silicon wafer processing. SiO2 grown on the topside of a silicon wafer is subjected to oxide defect detection with copper decoration. Silicon wafers cannot be manufactured without random defects on the surface. These are usually specified using the defect density D that has informal units of # of defects per cm2.