Silicon Carbide Heating Element is a time trusted heating element only surpassed in temperature. It is characterized by high use temperature, superior oxidation resistance, low corrosion, low creep and easy installation features. These are available in a very large range of sizes form 12mm to 50mm diameters and in lengths of up to 2250mm. It is a non-metal electric heating element. This can make use for furnace which temperature from 600?-1600?. These are used in metallurgy, ceramics, glass, machinery, analysis test, semiconductor, science and research.
Silicon controlled rectifier is a semiconductor device that is a member of a family of control devices known as thyristors. It is used to control current flow. It can be seen as a conventional rectifier controlled by a logic gate signal. It is a 4-layered 3-terminal device. A p-type layer acts as anode and an n-type layer as a cathode; the p-type layer closer to the n-type (cathode) acts as a gate.